| PART |
Description |
Maker |
| SKA06N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
|
SIEMENS AG
|
| SKW07N120 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 快速IGBT在不扩散核武器条约与软，恢复快反平行快恢复二极管技
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 7A 1200V TO247AC IGBT Diode
|
INFINEON[Infineon Technologies AG]
|
| SGB15N120 |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
|
SIEMENS AG
|
| SKW30N60 |
IGBTs & DuoPacks - 30A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SIGC07T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SGW02N120 |
Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SKP06N6007 SKA06N60 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
Infineon Technologies A...
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW25N12009 SGW25N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
